rev 1 october 2005 1/10 10 ST1802FX high voltage fast - switching npn power transistor features new series, enhanced performance fully insulated power package (u.l. compliant) for easy mounting high voltage capability (> 1500v) high switching speed tigther h fe control improved ruggedness in compliance with the 2002/93/ec european directive applications horizontal deflection output for color tv up to 29-inches description the ST1802FX is manufactured using new diffused collector technology for more stable operation vs base drive circuit variations resulting in very low worst case dissipation. order codes internal schematic diagram isowatt218fx part number marking package packing ST1802FX 1802fx isowatt218fx tube www.st.com
1 electrical ratings ST1802FX 2/10 1 electrical ratings table 1. absolute maximum rating table 2. thermal data symbol parameter value unit v cbo collector-base voltage (i e = 0) 1500 v v ceo collector-emitter voltage (i b = 0) 600 v v ebo collector-base voltage (i c = 0) 7v i c collector current 10 a i cm collector peak current (t p < 5ms) 15 a i b base current 4 a p tot total dissipation at t c = 25c 60 w v isol insulation withstand voltage (rms) from all three leads to external heatsink 2500 v t stg storage temperature -65 to 150 150 c t j max. operating junction temperature symbol parameter value unit r thj-case thermal resistance junction-case ____________________ max 2.1 c/w
ST1802FX 2 electrical characteristics 3/10 2 electrical characteristics (t case = 25c; unless otherwise specified) table 3. electrical characteristics 1 pulsed duration = 300 s, duty cycle 1.5%. symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 1500v v ce = 1500v t c = 125c 1 2 ma ma i ebo emitter cut-off current (i c = 0) v eb = 7v 1ma v ceo(sus) note 1 ) collector-emitter sustaining voltage (i b = 0) i c = 700 ma l = 25 mh 600 v v ce(sat) note 1 collector-emitter saturation voltage i c = 4 a i b = 0.8 a i c = 4 a i b = 1.2 a 5 1.5 v v v be(sat) note 1 base-emitter saturation voltage i c = 4.5 a i b = 1 a 1.2 v h fe dc current gain i c = 1 a v ce = 5 v i c = 5 a v ce = 1 v i c = 5 a v ce = 5 v 4 25 4.5 9 t s t f inductive load storage time fall time i c = 4a ___ _ _ f h = 16khz i bon(end) = 850ma v bb(off) = -2.5v l b = 4.5 h 2.6 0.2 4 0.6 s s
2 electrical characteristics ST1802FX 4/10 2.1 electrical characteristics (curves)) figure 1. safe operating area figure 2. thermal impedance figure 3. collector-emitter saturation voltage figure 4. base-emitter saturation voltage figure 5. dc current gain figure 6. dc current gain
ST1802FX 2 electrical characteristics 5/10 figure 7. power losses at 16khz figure 8. switching time inductive load figure 9. reverse biased area
3 test circuit ST1802FX 6/10 3 test circuit figure 10. inductive load switching test circuit
ST1802FX 4 package mechanical data 7/10 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
4 package mechanical data ST1802FX 8/10 dim. mm. min. typ max. a 5.30 5.70 c 2.80 3.20 d 3.10 3.50 d1 1.80 2.20 e 0.80 1.10 f 0.65 0.95 f2 1.80 2.20 g 10.30 11.50 g1 5.45 h 15.30 15.70 l9 10.20 l2 22.80 23.20 l3 26.30 26.70 l4 43.20 44.40 l5 4.30 4.70 l6 24.30 24.70 l7 14.60 15 n 1.80 2.20 r 3.80 4.20 dia 3.40 3.80 isowatt218fx mechanical data 7627132 b
ST1802FX 5 revision history 9/10 5 revision history date revision changes 18-oct-2005 1 first release
5 revision history ST1802FX 10/10 i nformation furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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